当前申请(专利权)人：
株式会社半導体エネルギー研究所
发明人：
山崎 舜平 | 大原 宏樹 | 佐々木 俊成 | 野田 耕生 | 桑原 秀明
简单同族：
CN102473735A | CN102473735B | CN103489871A | CN103489871B | CN104992984A | CN104992984B | CN105070761A | CN105070761B | EP2460183A1 | EP2460183A4 | JP2011049540A | JP2011049540A5 | JP2014225687A | JP2016174180A | JP2016174180A5 | JP2018136549A | JP2019070821A | JP2020057012A | JP5586361B2 | JP6306087B2 | JP6636126B2 | KR101541630B1 | KR101716918B1 | KR101762101B1 | KR101799252B1 | KR101913995B1 | KR101981441B1 | KR1020120051728A | KR1020130094357A | KR1020170027881A | KR1020170078882A | KR1020170121326A | KR1020180118818A | KR1020190057411A | KR1020190141791A | KR102058329B1 | TW201117383A | TW201530782A | TW201611299A | TW201611300A | TW201642481A | TWI511304B | TWI550874B | TWI550880B | TWI565083B | TWI602307B | US10396097 | US20110024750A1 | US20130140559A1 | US20140367680A1 | US20150303310A1 | US20160190175A1 | US20180138211A1 | US20200052003A1 | US8546180 | US8822990 | US9224870 | US9293601 | US9786689 | WO2011013561A1
